Abstract: Carbon Nanotube Based Field Effect Transistors (CNTFET) are being extensively studied as a counterpart device of silicon compatible CMOS. This paper presents a numerical simulation model of semiconducting carbon nanotube based field effect transistor to derive the electrical characteristics under ballistic regime. This technique is considered the approximation of non-equilibrium mobile charge density to get the fast and efficient modelling of drain current. The influence of gate dielectric constant and temperature on the performance of a carbon nanotube field-effect transistor has been studied by a numerical simulation model. Moreover, the impact of temperature has been portrayed for different gate voltage to observe the performance of the transistor.

Keywords: Chiral Indices; Ballistic; Temperature; Dielectric constant; Density of states; Fermi level

| DOI: 10.17148/IJIREEICE.2019.7501