Abstract: Carbon Nanotube Based Field Effect Transistors (CNTFET) are being extensively studied as a counterpart device of silicon compatible CMOS. This paper presents a numerical simulation model of semiconducting carbon nanotube based field effect transistor to derive the electrical characteristics under ballistic regime. This technique is considered the approximation of non-equilibrium mobile charge density to get the fast and efficient modelling of drain current. The influence of gate dielectric constant and temperature on the performance of a carbon nanotube field-effect transistor has been studied by a numerical simulation model. Moreover, the impact of temperature has been portrayed for different gate voltage to observe the performance of the transistor.

Keywords: Chiral Indices; Ballistic; Temperature; Dielectric constant; Density of states; Fermi level


Downloads: PDF | DOI: 10.17148/IJIREEICE.2019.7501

Cite This:

[1] Md Faysal Nayan, "Impact of Temperature on Electrical Characteristics of Ballistic Carbon Nanotube Field Effect Transistor for Different Dielectrics," International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering (IJIREEICE), DOI 10.17148/IJIREEICE.2019.7501

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