International Journal of Innovative Research in                 Electrical, Electronics, Instrumentation and Control Engineering

A monthly Peer-reviewed / Refereed journal

ISSN Online 2321-2004
ISSN Print 2321-5526

Since  2013

Abstract: Modeling and Simulation are achieved to plan a P-type Tunnel Field Effect Transistor (PTFET) utilizing various channel materials such as Si, Ge and Graphene Nanoribbon (GNR) for better DC performance. The energy band diagrams and surface potential of the transistor for each channel material are obtained for both on and off states from the solution of one dimensional Poisson equation by using indigenously developed software for simulation of the device properties. The results show that both on-current and on-off current ratio are found better in TFET with GNR as channel material other than Si and Ge as channel material. In this way GNR TFETs are good device for low power digital system.

Keywords: PTFET, GNR, On-Off current ratio

PDF | DOI: 10.17148/IJIREEICE.2022.10315

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