Abstract: Potential distribution and Wave function distribution are obtained by solving 2-D Poisson-Schrödinger equation using COMSOL with MATLAB. Conduction band profile and carrier density are investigated. Drain current of Graphene Channel Four Gate Transistor (G4-FET) and Gate-All-Around (GAA) MOSFET are calculated and compared.
Keywords: Four Gate Transistor (G4-FET), Gate-All-Around (GAA), 2-D Poisson-Schrödinger equation, potential distribution, Wave function distribution, Drain current
| DOI: 10.17148/IJIREEICE.2018.6101