Abstract: In this paper, the Static Noise Margin (SNM) and Power consumption of SRAM at different voltage supply and temperatures of Static Random Access Memory for IoTs utilizing Energy efficient GNRFET Technology is simulated using hspice. Further, the Simulation of various Waveforms of the GNRFET SRAM have been presented. SNM is present in SRAM cell which is effect the stability in read operation of the SRAM cells. SRAM cell stability analysis is a based on Static Noise Margin (SNM) investigation when in read mode.. The SRAM cell SNM during read operations analyzing various alternatives to improve cell stability.. The role of GNRFET improves its power efficiency and speed which play vital role in Aeronautical Engineering for various IoT applications. SNM is 6.7@1V, Average Power is 2.24@1V, SNM Is 2.43@45oC, and Average Power is 1.25@45oC.
Index Terms: GNR, GNRFET, Power Consumption, Cell Ratio, CMOS, Pull-up Ratio, SNM), Nano-electronic.
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