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International Journal of Innovative Research in
Electrical, Electronics, Instrumentation and Control Engineering

A monthly Peer-reviewed & Refereed journal

ISSN Online 2321-2004
ISSN Print 2321-5526

Since 2013

Charge Based Modelling for the Semiconductor Substrate of the Ferroelectric Field Effect Transistor (FEFET)

Shailesh Madhav Keshkamat

Abstract: This paper presents the modelling of FEFET by using the BSIM for the semiconductor layer while dealing with the Landau – Khalatnikov formulation for the Ferroelectric layer. Results are presented for the simulation for the charge-based evaluation of the semiconductor substrate, while the challenges to be addressed for the FE layer are enumerated.

Keywords: Ferro-Electric Field Effect Transistor, Landau – Khalatnikov Formulation, Berkeley Short Channel IGFET Model (BSIM), Interstitial Layer, Polarization of Domains.


Downloads: PDF | DOI: 10.17148/IJIREEICE.2025.13803

Cite This:

[1] Shailesh Madhav Keshkamat, "Charge Based Modelling for the Semiconductor Substrate of the Ferroelectric Field Effect Transistor (FEFET)," International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering (IJIREEICE), DOI 10.17148/IJIREEICE.2025.13803

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