Abstract: This paper presents the modelling of FEFET by using the BSIM for the semiconductor layer while dealing with the Landau – Khalatnikov formulation for the Ferroelectric layer. Results are presented for the simulation for the charge-based evaluation of the semiconductor substrate, while the challenges to be addressed for the FE layer are enumerated.
Keywords: Ferro-Electric Field Effect Transistor, Landau – Khalatnikov Formulation, Berkeley Short Channel IGFET Model (BSIM), Interstitial Layer, Polarization of Domains.
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