International Journal of Innovative Research in                 Electrical, Electronics, Instrumentation and Control Engineering

A monthly Peer-reviewed / Refereed journal

ISSN Online 2321-2004
ISSN Print 2321-5526

Since  2013

Abstract: The estimation of the band hole of materials is significant in the semiconductor, nano material and sun oriented ventures. This note shows how the band hole of a material still up in the air from its UV ingestion spectrum. Measuring the band hole is significant in the semiconductor and nano material businesses. The band hole energy of encasings is enormous (> 4eV), however lower for semiconductors (< 3eV). The band hole properties of a semiconductor can be constrained by utilizing diverse semiconductor combinations like GaAlAs, InGaAs, and InAlAs. It has been found that a significant number of the nano material studies on these materials are being completed utilizing a little amount of the example. Consequently, testing turns into a central point of interest this sort of investigation. The examination was done utilizing a LAMBDA™ 1050 UV/Vis/NIR spectrometer.
Keywords: Advanced materials, Band gap, wide band gap, Spectrometer.


PDF | DOI: 10.17148/IJIREEICE.2022.10227

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