International Journal of Innovative Research in                 Electrical, Electronics, Instrumentation and Control Engineering

A monthly peer-reviewed journal

ISSN Online 2321-2004
ISSN Print 2321-5526

Since  2013

Abstract: Scaling the transistor sizes in the sub micro-meter regime has made it difficult to overcome the problem of short channel effects. Double Gate (DG) MOSFETs reduce the short channel effects and provide a better control of the threshold voltage by utilizing the electrostatic coupling from two gates on either side of the channel. Independent control of front and back gate in DG devices can be effectively used to improve performance and reduce power in sub-50nm circuits. In this paper, our aim is to carry out simulations of Symmetric 30 nm Double Gate MOSFET in VTCAD and to improve the performance of MOSFET by studying the MOSFETs with double gate.

Keywords: Double Gate MOSFETs, Short Channel Effects, VTCAD, Drain Induced Barrier Lowering

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