Abstract: GaN-on-SiC heterostructures are emerging as key materials for high-power and high-frequency electronic applications due to their superior electrical and thermal properties. This paper presents a detailed study of the material characteristics, device behavior, and performance advantages of GaN grown on SiC substrates. Comparative analysis with conventional silicon technology demonstrates improved efficiency, reduced power loss, enhanced thermal stability, and higher operating frequency capability. The results confirm the suitability of GaN-on-SiC devices for next-generation RF systems, electric vehicles, renewable energy converters, and aerospace electronics.

Keywords: GaN-on-SiC Heterostructures, High-Power RF Devices, Thermal Stability and Power Density, Wide Bandgap Semiconductors

Downloads: | DOI: 10.17148/IJIREEICE.2026.14208