Abstract: With the invention of new technology below 22nm, leakage current is increasing exponentially due to the different Short Channel Effects (SCEs). FinFETs have gain attractive attention due to their superior electrostatic control over channel and hence low SCEs. In this work, multigate FinFETs for gate length of 20nm for three different shapes viz. Rectangular, Trapezoidal and Triangular with different fin heights are designed using Cogenda TCAD (Technology Computer Aided Design) tool. It was observed that for any fin height of multigate FinFETs, the Triangular fin shape showed better improvement in the electrical characteristics in terms of Drain-Induced Barrier Lowering (DIBL); Threshold voltage roll off (Vt); Sub-threshold Swing (SS); Leakage current (IOFF).The Rectangular trigate FinFET has very large leakage current which degrade its overall performance but it has maximum drive current (ION) as compare to other multigate FinFETs.

Keywords: FinFET; Drain-Induced Barrier Lowering; Threshold voltage roll off; Sub-threshold Swing; Leakage current, fin height, gate length.