Abstract:
The work in this paper addresses the capabilities and performance of single wall carbon nanotube (SWCNT) bundles as interconnects for applications in VLSI circuits. The carbon nanotube (CNT) bundles have potential to provide an alternate solution for the resistivity and electro-migration problems faced by traditional copper interconnect in very deep submicron technology. Using an equivalent RLC model, the performance of CNT-bundle interconnects is compared to copper wires at different lengths. It is shown in the results that carbon nanotubes can easily replace conventional Copper Interconnects. CNTs because of their superior electrical, mechanical, and thermal properties have novel applications in every day to day life applications.

Keywords: Electromigration, Grain Boundary Scattering, Interconnect, Very Large Scale Integration (VLSI)