Abstract: The electrical properties of ZnIn2Se4 thin films grown on glass substrates by the flash evaporation technique at different substrate temperatures (Ts) ranging from 473-623 K are studied. The influence of substrate temperature (Ts) on the electrical characteristics such as resistivity (?), Hall coefficient (RH), carrier concentration (?), and Hall mobility (ÁH) of ZnIn2Se4 thin films were studied. It is observed that the films deposited at 573 K have minimum resistivity. The activation energies (?E) were evaluated in the temperature range 303-423 K.
Keywords: ZnIn2Se4, Polycrystalline, Substrate temperature, Activation energy, Hall Effect.